ret y rt - ideal for automated placement - low forward voltage drop - glass passivated chip junction - halogen-free according to iec 61249-2-21 definition sy m bol u n i t v rrm v i f(av) a trr ns cj pf t j o c t stg o c document number: ds_d1402014 version: d14 S1GM thru s1jm taiwan semiconductor surface mount rectifier feat u res - moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec weight: 0.006 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er s1 gm s1 j m m ech an i cal dat a case: micro sma molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test polarity: indicated by cathode band marking code a5 a7 maximum repetitive peak reverse voltage 400 600 maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 20 a 780 note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. maximum reverse current @ rated vr t j =25 t j =125 i r maximum instantaneous forward voltage (note 1) @ 1 a v f v r jl r ja 30 110 o c/w operating junction temperature range -55 to +175 typical junction capacitance (note 3) 5 storage temperature range -55 to +175 note 1: pulse test with pw=300 s, 1% duty cycle micro sma 1.1 1 ua 50 typical reverse recovery time (note 2) typical thermal resistance downloaded from: http:///
ret y rt part n o. note 1: "x" defines voltage from 400v (S1GM) to 600v (s1jm) note 2: for micro sma: packing code (whole series with green compound) part n o. S1GM S1GM (ta=25 unless otherwise noted) document number: ds_d1402014 version: d14 rs g aec-q1 0 1 qu ali fi ed h descri pt i on green compound green compound aec-q101 qualified S1GM rsg rs g rat i n gs an d ch aract eri st i cs cu rv es aec-q1 0 1 qu ali fi ed prefix "h" 1,800 / 7" plastic reel pack i n g S1GMhrsg rs suffix "g" micro sma ex am ple preferred p/n pack i n g code green com pou n d code S1GM thru s1jm taiwan semiconductor orderi n g i n form at i on pack i n g code green com pou n d code pack age s1xm (note 1) 0 0.2 0.4 0.6 0.8 1 1.2 0 2 55 07 51 0 01 2 51 5 01 7 5 average forward current (a) lead temperature ( o c) fig.1 forward current derating curve resistive or inductive load 1 10 100 1 10 100 peak forward surge urrent (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj=25 tj=125 tj=75 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 instantaneous forward current (a) forward voltage (v) fig. 5 typical forward characteristics pulse width=300 s 1% duty cycle downloaded from: http:///
ret y rt min max min max a 2.30 2.70 0.091 0.106 b 2.10 2.30 0.083 0.091 c 0.63 0.73 0.025 0.029 d 0.10 0.20 0.004 0.008 e 1.15 1.35 0.045 0.053 f 0.65 0.85 0.026 0.034 g 1.15 1.35 0.045 0.053 h 0.75 0.95 0.030 0.037 i 1.10 1.50 0.043 0.059 j 0.55 0.75 0.022 0.030 k 0.55 0.75 0.022 0.030 l 0.65 0.85 0.026 0.034 p/n = marking code yw = date code document number: ds_d1402014 version: d14 m ark i n g di agram d 0.8 0.031 e 1.0 0.039 b 2.0 0.079 c 0.5 0.020 su ggest ed pad lay ou t symbol unit (mm) unit (inch) a 1.1 0.043 S1GM thru s1jm taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 1 10 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p downloaded from: http:///
|
